Generalized Lee-Wick Formulation from Higher Derivative Field Theories

We study a higher derivative (HD) field theory with an arbitrary order of derivative for a real scalar field. The degree of freedom for the HD field can be converted to multiple fields with canonical kinetic terms up to the overall sign. The Lagrangian describing the dynamics of the multiple fields is known as the Lee-Wick (LW) form. The first step to obtain the LW form for a given HD Lagrangian is to find an auxiliary field (AF) Lagrangian which is equivalent to the original HD Lagrangian up to the quantum level. Till now, the AF Lagrangian has been studied only for N=2 and 3 cases, where $N$ is the number of poles of the two-point function of the HD scalar field. We construct the AF Lagrangian for arbitrary $N$. By the linear combinations of AF fields, we also obtain the corresponding LW form. We find the explicit mapping matrices among the HD fields, the AF fields, and the LW fields. As an exercise of our construction, we calculate the relations among parameters and mapping matrices for $N=2,3$, and 4 cases.Comment: 23 pages, version to appear in PRD, we improved the transformation from HD to LW in Subsection 3.1, added comments on gauge field related with AF Lagrangians in Conclusion, and added reference

Integrated Circuit Design for Radiation Sensing and Hardening.

Beyond the 1950s, integrated circuits have been widely used in a number of electronic devices surrounding people’s lives. In addition to computing electronics, scientific and medical equipment have also been undergone a metamorphosis, especially in radiation related fields where compact and precision radiation detection systems for nuclear power plants, positron emission tomography (PET), and radiation hardened by design (RHBD) circuits for space applications fabricated in advanced manufacturing technologies are exposed to the non-negligible probability of soft errors by radiation impact events. The integrated circuit design for radiation measurement equipment not only leads to numerous advantages on size and power consumption, but also raises many challenges regarding the speed and noise to replace conventional design modalities. This thesis presents solutions to front-end receiver designs for radiation sensors as well as an error detection and correction method to microprocessor designs under the condition of soft error occurrence. For the first preamplifier design, a novel technique that enhances the bandwidth and suppresses the input current noise by using two inductors is discussed. With the dual-inductor TIA signal processing configuration, one can reduce the fabrication cost, the area overhead, and the power consumption in a fast readout package. The second front-end receiver is a novel detector capacitance compensation technique by using the Miller effect. The fabricated CSA exhibits minimal variation in the pulse shape as the detector capacitance is increased. Lastly, a modified D flip-flop is discussed that is called Razor-Lite using charge-sharing at internal nodes to provide a compact EDAC design for modern well-balanced processors and RHBD against soft errors by SEE.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/111548/1/iykwon_1.pd

Scalar Perturbation in Symmetric Lee-Wick Bouncing Universe

We investigate the scalar perturbation in the Lee-Wick bouncing universe driven by an ordinary scalar field plus a ghost field. We consider only a symmetric evolution of the universe and the scalar fields about the bouncing point. The gauge invariant Sasaki-Mukhanov variable is numerically solved in the spatially flat gauge. We find a new form of the initial perturbation growing during the contracting phase. After the bouncing, this growing mode stabilizes to a constant mode which is responsible for the late-time power spectrum.Comment: 21 pages, 6 figures, references are adde

Evolution of Tachyon Kink with Electric Field

We investigate the decay of an inhomogeneous D1-brane wrapped on a $S^1$ with an electric field. The model that we consider consists of an array of tachyon kink and anti-kink with a constant electric flux. Beginning with an initially static configuration, we numerically evolve the tachyon field with some perturbations under a fixed boundary condition at diametrically opposite points on the circle $S^1$. When the electric flux is smaller than the critical value, the tachyon kink becomes unstable; the tachyon field rolls down the potential, and the lower dimensional D0- and $\bar {\rm D}0$-brane become thin, which resembles the caustic formation known for this type of the system in the literature. For the supercritical values of the electric flux, the tachyon kink remains stable.Comment: 27 pages, 8 figures, some changes, one reference added, version to appear in JHE

Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures